Ferroelectric Oxide Memory FET (FEMFET) Development
Abstract
This Final Technical Report covers the integration of oxide ferroelectric thin films (e.g. bismuth titanate = Bi4Ti3Ol2 = BTO or lead zirconate titanate = PZT) into the gate dielectric of a metal-insulator-silicon field effect transistor (MISFET), capable of functioning in a non-volatile, non- destructive readout (NDRO) ferroelectric random access memory (FERRAM). Also provided is a detailed description of the test vehicles implemented for the study of fabrication process integration and optimization and the resultant properties of ferroelectric/(semiconductor) memory FET (FEMFET) and related structures. The Interim Report covering the first phase of this contract described an investigation of UHV-deposited ferroelectric fluoride (BaMgF4 = BMF) films as gate insulators; however, BMF transistor structures exhibited rather poor reproducibility, and electrical instability manifested as poor retention capability. Results of the second phase of this program are presented in this report, which focuses on exploration of oxide ferroelectric films for the FEMFET gate dielectric. There is growing evidence that layers of ferroelectric oxides, when suitably processed may possess switching and stability properties that are far superior to those attainable with BMF layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1994
- Accession Number
- ADA283203
Entities
People
- D. A. Adams
- Donald R. Lampe
- H. Buhay
- J. W. Dzimianski
- M. H. Francombe
Organizations
- Westinghouse Electric Corporation