Tunneling and Transport in Mesoscopic Structures
Abstract
This program is focused on developing processes for the fabrication of arrays of side-by-side tunneling junctions and single side-by-side junctions. The approach combines the use of electron beam lithography, ion milling, and reactive ion etching to produce structures on Si wafers which can serve as contact shadow masks for low-temperature, with an angled vapor deposition step which is used to complete the array by forming junctions. We have produced shadow masks with 300 A-wide channels at the National Nanofabrication Facility at Cornell. We have configured our deposition system so as to achieve precision alignment of the direction of the vapor stream relative to the array structure, and proceeding with the fabrication and electrical characterization arrays. Electron microscope studies indicate that we have achieved an acceptable level of alignment for the purposes of the project, and low temperature depositions are under way at this writing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1994
- Accession Number
- ADA283426
Entities
People
- Allen M. Goldman
Organizations
- University of Minnesota