Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers

Abstract

Data are presented characterizing a new process for fabrication of vertical-cavity surface-emitting lasers based on the selective conversion of high Al composition epitaxial AlGaAs to a stable native oxide using wet oxidation. The native oxide is used to form a ring contact to the laser active region. The resulting laser active regions have dimensions of 8, 4, and 2 microns The lowest threshold laser is achieved with the 8-microns active region, with a minimum threshold current of 225-microns continuous wave at room temperature

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 04, 1994
Accession Number
ADA283861

Entities

People

  • D. G. Deppe
  • D. L. Huffaker
  • K. Kumar
  • T. J. Rogers

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Microscopes
  • Electronics Laboratories
  • Far Field
  • Heterojunctions
  • Lasers
  • Materials
  • P Type Semiconductors
  • P-N Junctions
  • Power Electronics
  • Quantum Wells
  • Radiation
  • Radiation Patterns
  • Resistance
  • Scanning Electron Microscopes
  • Semiconductor Devices
  • Semiconductors
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy