Low Voltage Electron Beam Lithography

Abstract

The contract has three parts covering aspects of high precision electron beam lithography: (1) Comprehensive computer modeling of the electron beam tools; (2) Experimental determination of the properties of sources, columns, and targets; and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques

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Document Details

Document Type
Technical Report
Publication Date
Aug 29, 1994
Accession Number
ADA284181

Entities

People

  • R. Browning
  • Roger Fabian W. Pease

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Coverings
  • Elastic Scattering
  • Electron Beam Lithography
  • Electron Beams
  • Electrons
  • Integrated Systems
  • Lithography
  • Low Voltage
  • Orthogonality
  • Scattering
  • Single Crystals
  • Voltage

Fields of Study

  • Physics

Readers

  • Graph Algorithms and Convex Optimization.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene