Proceedings of the International Workshop on Computational Electronics (3rd), Held in Portland, Oregon on May 18-20, 1994
Abstract
A unique study of several previously reported computer simulations which solve the Boltzmann Transport Equation (BTE) for electrons in silicon has been completed. A total of 47 individuals representing 19 laboratories in 6 countries participated in this comparison, with a total of 21 data sets contributed. Most of the simulations are based on the Monte Carlo particle technique, and have been used here to calculate a set of transport characteristics for intrinsic silicon at room temperature with a homogeneous electric field. From a global perspective the results vary widely, but they provide for the first time a quantitative comparison of many silicon transport models. If we group the data sets according to their bandstructure models and compare groups to one another the separate effects of bandstructure and phonon scattering rates can be seen. In the group of full-band models we observe a striking and unexpected agreement between 4 of the data sets, and the possible significance of this observation will be discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 20, 1994
- Accession Number
- ADA284214
Entities
Organizations
- National Science Foundation