Transport and Nucleation Processes During the Vapor Growth of Diamond.
Abstract
The growth of electronic grade diamond crystals at reasonable cost is limited by several factors - lower quality at high growth rates, secondary nucleation, and morphological instabilities. The research performed under this grant addressed these areas. Significant progress was made including: (1) identification of secondary nucleation mechanism through graphitic, sup2, precursors and; (2) determination of influence of twins on diamond growth rate and quality. Preliminary estimates were made of the parameter range that minimizes morphological instabilities. The results also have relevance for the general question of the relationship of diamond quality to growth rate and to the molecular mechanism of diamond growth. Diamond, Chemical Vapor Deposition, Nucleation, Transport Processes
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 29, 1994
- Accession Number
- ADA284411
Entities
People
- John C. Angus
Organizations
- Case Western Reserve University