Structural, Chemical, and Electronic Properties of Cu/Ta(110)
Abstract
The properties of ultrathin Cu films on a Ta(110) substrate have been studied using X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), temperature-programmed desorption (TPD), and infrared reflection adsorption spectroscopy (IRAS). For coverages of < 1.2 monolayer the Cu overlayers grow pseudomorphic with respect to the Ta substrate. XPS results indicate that the Cu (2 sub p sub 3/2) binding energy of the supported Cu atoms is perturbed by + 0.3 eV compared to that of the surface atoms in Cu(100). These electronic and physical pertubations induce distinct differences in the chemisorptive properties of the Cu films. This is evidenced by CO TPD results which indicate a 50 K increase in the CO desorption temperature as well as a CO stretching frequency that is 20 /cm higher than observed for the Cu(111) surface. A comparison of these results with those previously obtained for Cu overlayers on different substrates shows a correlation among the electronic perturbations of the adlayers, the metal-substrate bond strengths, the CO desorption temperatures, and the C O stretching frequencies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 14, 1993
- Accession Number
- ADA284457
Entities
People
- D. W. Goodman
- Robert A. Campbell
- W. K. Kubn
Organizations
- Air Force Research Laboratory