Visible Light Emitting Materials and Injection Devices
Abstract
We completed an extensive investigation this quarter into the influence of growth parameters (including dopant source condition) on the free- hole concentration in p-type ZnSe:N epilayers which involved real-time in situ cathodoluminescence intensity measurements during growth as well as ex situ Hall-effect measurements on a number of selected samples. The parameters varied included nitrogen plasma integrated intensity, substrate temperature and II/VI beam equivalent pressure ratio. CL intensity measurements were made in situ during epilayer growth using the apparatus illustrated in Fig. I.1. These measurements could be made in real-time as the various growth parameters were modified. In addition, free-hole concentrations were measured in films growth under particular conditions using the sample configuration illustrated in Fig. I.2. The ohmic contact mesas were deposited in situ through a mechanical mask which was introduced over the sample following the growth of the p-doped epilayer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1994
- Accession Number
- ADA284796
Entities
People
- Paul H. Holloway
Organizations
- University of Florida