Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam
Abstract
The work focused on the heteroepitaxial growth, doping and structural and optoelectronic characterization of GaN and AlN films by the method of ECR- assisted MBE. The effect of charged species in the ECR discharge in the growth and properties of the films was investigated. Conditions were identified to grow atomically smooth films (layer-by-layer growth) in semi-insulating form (p = 10(exp 12) ohms x cm). Such films were doped p- and n-type with Mg and Si respectively at the level of 10(exp 19)/cu cm. Reactive ion etching and metallic contacts to GaN were developed. From these studies we concluded that surface states are not present in the gap of GaN and thus dislocation should not effect the device performance. The role of hydrogen in the doping of GaN was investigated and p-n junction LED is were fabricated and tested. The defects in these materials were investigated by transport, photoluminescence and optical studies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1994
- Accession Number
- ADA284838
Entities
People
- Theodore D. Moustakas
Organizations
- Boston University