Investigation of Superlattice Disordering and Diffusion Mechanisms in GaAs

Abstract

Accomplishment of researches conducted under support of contract DAAL03-89-K-0119 have been reported. Two Ph.D. degrees have been granted to two students supported by this contract. A total of six categories of studies, designated for convenience, have been performed. The first five categories of studies concern the point defects and diffusion mechanisms of elements occupying the group III sublattice of GaAs and/or AlAs/GaAs superlattice materials, and one category of studies concerns the group V sublattice acceptor carbon in AlAs/ GaAs superlattices. With theses studies, our knowledge of point defects and diffusion mechanisms of elements occupying the group III sublattice of GaAs and/ or AlAs/GaAs superlattice materials have now becoming substantially complete in the sense that interpretations of almost all experimental results are self- consistent and mutually-consistent. Point Defects, Diffusion mechanisms, GaAs, AlAs/GaAs Superlattices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 08, 1994
Accession Number
ADA284847

Entities

People

  • T. Y. Tan
  • U. Gosele

Organizations

  • Duke University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Contracts
  • Crystals
  • Diffusion
  • Diffusion Coefficient
  • Diffusivity
  • Elements
  • Engineering
  • Equations
  • Gallium Arsenides
  • Materials
  • Materials Science
  • Mechanical Engineering
  • Point Defects
  • Semiconductors
  • Simulations
  • Superlattices

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.