Low Temperature Synthesis of Semiconductor Materials
Abstract
This report summarizes the results obtained in the second year of the grant. During this time experiments were conducted which demonstrated that phenyl groups on heavier main group atoms undergo migration with great facility. This mobility has been utilized to prepare novel materials with a broad range of semiconducting and optoelectronic properties. Gallium arsenide and gallium phosphide have been prepared at modest temperatures (approx. 400 deg C) from easily prepared single source precursors. Work conducted in this time period led to the discovery that ternary compounds composed of tin, sulfur and selenium can be prepared in high yields at approx. 400 deg C as phase pure materials in nonstoichiometric ratios from readily available compounds. Conventional procedures call for temperatures > 1000 deg C. Also discovered was that pyrolysis of perbenzylated compounds is advantages over the alkylated analogues among which are lower toxicity, faster decomposition times and lower contamination of target products.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 14, 1994
- Accession Number
- ADA285120
Entities
People
- Philip Boudjouk
Organizations
- North Dakota State University