Pseudomorphic Stabilization of Diamond on Non-Diamond Substrates

Abstract

First principles electronic structure calculations and high resolution transmission electron microscopy were used to study the interface of diamond with beryllium oxide (BeO) and cubic boron nitride (c-BN). These are the tetrahedrally coordinated, covalently bonded solids that are most closely lattice-matched to diamond. The theoretical results indicate that diamond should adhere strongly to both BeO and c-BN. Diamond deposited on the Be terminated (0001) surfaces of BeO by hot-filament assisted deposition showed local epitaxy of isolated diamond crystals. Parallel epitaxy of diamond films was achieved on the B terminated (111) surfaces of c-BN. Diamond, Beryllium oxide, Cubic boron nitride, Heteroepitaxy, Chemical vapor deposition.

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Document Details

Document Type
Technical Report
Publication Date
Sep 16, 1994
Accession Number
ADA285231

Entities

People

  • Alberto Argoitia
  • John C. Angus
  • Long Wang
  • Walter R. Lambrecht

Organizations

  • Case Western Reserve University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Crystal Structure
  • Crystals
  • Diamond Films
  • Electron Microscopy
  • Energy Bands
  • Epitaxial Growth
  • High Resolution
  • Materials
  • Microscopy
  • Semiconductors
  • Silicon Carbide
  • Transmission Electron Microscopy
  • Wide Bandgap Semiconductors

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene