Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.
Abstract
The final report covers (1) The development of synthetic methods and detailed phase and compositional characterization of our cubic SiC-GeC solid solutions and diamond structured SiGeC thin films (2) Our preliminary findings on bandgap measurements (3) The development of a novel technique for in situ observation of SiGeC CVD in an environmental electron microscope. We used this technique to deposit films that are lattice matched to Silicon. The work was carried out in the Chemical Vapor Deposition Laboratory (by graduate student Michael Todd, postdoctoral research associate Philippe Bonneau, and Professor John Kouvetakis) and the Ion Beam Facility (Barry Wilkens), with assistance from the staff of the High Resolution Electron Microscopy Group (Dr. Renu Sharma, and Professor David Smith) at Arizona State University. Vibrational characterization and bandgap studies were carried out by Nigel Cave at Motorola Phoenix.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 14, 1994
- Accession Number
- ADA285317
Entities
People
- James W. Mayer
Organizations
- Arizona State University