Investigation of Single Events Upsets in Silicon and GaAs Structures Using Reaction Calculations
Abstract
Two procedures were developed to obtain the dimensions of the sensitive volume: one using charge collection measurements and the other proton Seu cross sections measured at different energies and angles of incidence. The CUPID simulation codes play an important role. They have been made user friendly and received adequate documentation. The methodology has been extended to single event latch-up and displacement damage. Energy deposition, CUPID, Charge collection, Sensitive volume, Single event upsets, Spallation reactions, Displacement damage, Single event latch-up and displacement damage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1994
- Accession Number
- ADA285581
Entities
People
- Peter J. Mcnulty
Organizations
- Clemson University