Picosecond Optoelectronic AND-GATE
Abstract
Logic gates based on conventional high speed detectors are limited by the recovery time, which can be over a hundred pico seconds. High speed direct detection with picosecond response near 0.85 um has been successfully demonstrated in LT grown GaAs structures using interdigitated electrodes. These can form the key element in an optical AND GATE used for demultiplexing digital data at rates of up to 100 G bits. In this project, new materials based on LT grown InGaAs are developed and tested for their suitability at the 1.3 and 1.5 um wavelengths, where single mode fiber capable of supporting such rates operates. The results to date extend pico second range responses to around 1.06 um, but basic physical properties still preclude full extension to the desired wavelengths allowed by the range of transparency. Successful applications have resulted at the shorter wavelengths, and the results of these studies will facilitate the on-going material development needed to further extend the range of this new device technology. High speed detector, Low temperature grown InGaAs, Optical gate, AND Gate, Fiber optic switch
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1994
- Accession Number
- ADA285672
Entities
People
- Steven L. Williamson