Synthesis and Studies of Organometallic Precursors for CVD of Thin Film Electronic Materials
Abstract
Cyclic molecular systems of the type, A(XX')B(YY')n (where A, B = Al, N or Si, C; X, X', Y, Y'= 11, CH3, etc. and n 2 and 3), were studied as potential single-source precursors for the CVD of AlN and SiC films. These compounds provide the required elements for die product film already covalently bound to one another in a single, volatile molecular source and, in the case of the SiC precursors (where n = 2), they contain built-in ring-strain energy to lower the decomposition onset temperature. Efforts have included the study of the (CH3)2AlNH23 --> AIN CVD system by mass-spectrometric/time-of-flight measurements and the investigation of substituted disilacyclobutanes as single- source SiC precursors. The mass-spec/-TOF studies have indicated that a slow decomposition of the (CH3)2AlNH23 (I) precursor to produce methane and a series of higher oligomeric products occurs during its vaporization at 75-100 deg C. These oligomeric species are believed to be intermediates formed in the gas- phase thermal decomposition of I to AlN. This precursor was used to deposit high quality AlN films up to 2 micrometers thick on Si and sapphire substrates in a LPCVD apparatus and is being tested for use in the deposition of AlN interface layers in A1203-reinforced metal matrix composites. Disilacyclobutane, SiH2CH22, was found to yield stoichiometric, crack-free, adherent, polycrystalline SiC films on Si (100) and Si (111) surfaces by LPCVD at temperatures as low as 690 OC. Chemical vapor deposition (CVD), AIN, SiC, Organometallic precursor.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1994
- Accession Number
- ADA285834
Entities
People
- L. V. Interrante
Organizations
- Rensselaer Polytechnic Institute