Spectroscopic Assessment of the Reliability of Metal/Metal Oxide Interfaces

Abstract

There is considerable interest in understanding the source of the electromigration resistance of the well-known interconnect material, titanium tungsten (Ti:W). Measures of electromigration can be obtained with respect to a variety of parameters/ physical properties. The variation of some parameters over time can presumably be associated with the increase in the probability of an electromigration related interconnect failure. In the simplest analysis, we immediately note that any metal in contact with the atmosphere oxidizes. Furthermore, the process is accelerated by increasing the temperature as is the rate of electromigration related failures. Therefore, a rational basis exists to suspect that oxidation related chemistry can be related to electromigration related failure processes. This study probes the oxidation chemistry in this alloy on native oxide coated silicon. We report physical and chemical measurements on the interface between a ceramic and metal phase. Titanium, Tungsten, Electromigration, Oxidation.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1994
Accession Number
ADA286131

Entities

People

  • Joseph Chaiken

Organizations

  • Syracuse University

Tags

DTIC Thesaurus Topics

  • Air Force
  • Carbonyl Complexes
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Failure Mode And Effect Analysis
  • Inorganic Chemistry
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Measurement
  • Metal Oxides
  • Oxidation
  • Oxide Films
  • Physical Properties
  • Spectra

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Integrated Circuit Design and Technology.
  • Theoretical Analysis.