InP Solar Cell Development on Inexpensive Silicon Substrates
Abstract
Task 1 - Optimize Emitter/Base Dopants - In Phase I, P/N InP control cells on InP wafers had substantially less photocurrent than N/P InP counterparts. The suspected culprit was diffusion of the zinc dopant, creating a thicker emitter than intended. Secondary Ion Mass Spectroscopy (SIMS) data taken during this report period confirmed this hypothesis. The primary findings are: P/N InP cells were grown with both 200 and 400 A thick emitters; however, the SIMS profiles showed both cells have virtually the same junction depth, or approx. 2000 A thick emitters, about 5 to 10X larger than expected. The excess Zn is diffusing in from the 3000 A thick P(++) In(0.53)Ga(0.47)As contact layer on top of the cell. P/N InP cells on InP wafers or Si wafers had virtually the same diffusion profiles, with only a barely noticeable enhancement of the Zn diffusion in higher defect density InP/Si wafer, which is good news.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1994
- Accession Number
- ADA286254
Entities
People
- Steven J. Wojtczuk