Quarterly Report for Contract N00014-92-J-1308 (Lehigh University)
Abstract
Research has begun on SiGe oxidation in situ in a UHV chamber with high resolution XPS. In this phase of the work, the early stages of oxidation are being studied as a chemisorbed layer of oxygen on clean silicon (100) is converted to a thin (<5 nm) oxide layer. We have observed that the native oxide on SiGe alloys contains Ge suboxides as revealed in the curve-fitted angle- resolved spectra. This is consistent with preliminary observations made earlier in this laboratory. Electron beam heating is being used to initiate thermal oxidation. We have been able to heat samples to >900 deg C with excellent uniformity over a 1 sq. cm area. An optical pyrometer suitable for transmission through a quartz vacuum window was recently purchased and has been employed for temperature measurement. The sample surface is prepared either by HF etching or in situ sublimation of the native oxide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1994
- Accession Number
- ADA286579
Entities
People
- Ralph J. Jaccodine
Organizations
- Lehigh University