Certain Physical Properties of Lanthanum Digermanide

Abstract

The authors carried out an investigation of the physical properties of lanthanum digermanide on samples obtained by sintering the components and subsequent smelting in an argon atmosphere. On the basis of the results obtained the conclusion was drawn that lanthanum digermanide possesses semiconductor properties.

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Document Details

Document Type
Technical Report
Publication Date
Oct 03, 1994
Accession Number
ADA286592

Entities

People

  • O. B. Goncharuk
  • V. M. Makarchenko
  • Yu. B. Paderno

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Intelligence
  • Chemical Composition
  • Electrical Resistance
  • Germanium Compounds
  • Heat Of Activation
  • Lanthanum
  • Materials
  • Melting Point
  • Metals
  • Physical Properties
  • Rare Earth Elements
  • Resistance
  • Semiconductors
  • Thermal Expansion
  • Translations
  • Work Functions

Readers

  • Environmental Engineering
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics