Diamond Atomic Layer Epitaxy.

Abstract

Work during the current reporting period has focused on the following items: (1) Auger and ELS of deposition with methyl bromide on diamond. (2) Studies of methyl bromide and ethylene reaction with silicon (100) and (111). (3) Further studies of hydrogen on diamond(100) and surface reconstructions. (4) Set-up and testing of load-lock chamber for hot filament CVD. Auger and ELS analysis was performed on a diamond(100) sample on which carbon was deposited with cracked methyl bromide. This analysis was carried out ex situ with a JEOL Auger microprobe which was recently acquired by SI Diamond Technology. Mask lines from the tantalum straps which were used to mount the crystal on the sample holder are apparent in electron microscope images of the sample. The carbon KLL Auger signal from the sample at about 272 eV is observed to have the lineshape which is characteristic of carbon in diamond (as opposed to graphitic) form. In addition, the pipi* plasmon which has been observed at approximately 6.5 eV energy loss for graphitic carbon is not observed in electron energy loss spectroscopy (ELS) of this sample which was performed at 350 eV beam energy. Both of these results point to deposition of carbon in diamond form .

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Document Details

Document Type
Technical Report
Publication Date
Oct 06, 1994
Accession Number
ADA288567

Entities

People

  • Keith Jamison
  • Mark Hammond

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Alkenes
  • Annealing
  • Atomic Layer Epitaxy
  • Electron Energy
  • Electron Microscopes
  • Electrons
  • Energy
  • Epitaxial Growth
  • Ethylenes
  • Filaments
  • Hydrogen
  • Information Security
  • Military Research
  • Security
  • Silicon
  • Silicon Carbide

Readers

  • Organic Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene