Development of HTS SNS Devices on Large Area Substrates by Single Source MOCVD.

Abstract

A novel, single-source metalorganic chemical vapor deposition (SSMOCVD) technique has shown exceptional promise for the growth of epitaxial oxide films and multilayers on large area substrates, as needed for the commercial-scale production of high temperature superconductor devices and circuits. In this contract the SSMOCVD technique was applied to growth of YBa2Cu3O(7-x) and CaRuO3 films and multilayers for the fabrication of superconductor-normal-superconductor Josephson junctions. A process was developed for the growth of epitaxial CaRuO3 films by SSMOCVD, which was the first reported growth of CaRuO3 by MOCVD. Also, a process was developed for the in situ growth of epitaxial YBa2Cu3O(7-x)/CaRuO3 multilayers by SSMOCVD. Finally, epitaxial SNS edge junctions were fabricated and tested which used a top YBCO/CaRuO3 bilayer grown in situ by SSMOCVD and a base SrTiO3/YBa2Cu3O(7-x) bilayer grown in situ by pulsed laser ablation.

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Document Details

Document Type
Technical Report
Publication Date
May 18, 1994
Accession Number
ADA288601

Entities

People

  • J. K. Truman

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Ablation
  • Chemical Vapor Deposition
  • Classification
  • Contracts
  • Critical Temperature
  • Electrical Properties
  • Films
  • High Temperature
  • High Temperature Superconductors
  • Magnetometers
  • Materials
  • Measurement
  • Pulsed Lasers
  • Resistance
  • Security
  • Superconductors
  • Temperature Gradients

Fields of Study

  • Physics

Readers

  • Human-Computer Interaction (HCI).
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition