Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Abstract

During this program period, we have performed large area growth of device-quality InAsSb films on 2-inch Si substrates. We have fabricated InAsSb films of uniform thickness, which are suitable for dense detector arrays. To obtain higher quantum efficiency, a pin structure for LWIR detector has been proposed and delineated. Results obtained in the last month are presented and discussed in the following sections.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
ADA288604

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Carrier Mobility
  • Conduction Bands
  • Detectors
  • Efficiency
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Infrared Detectors
  • Long Wavelengths
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Efficiency
  • Substrates
  • Thickness
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing