Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Abstract

During this program period, we have designed a readout circuit based on cryo CMOS technology with device features of 1.0 micron dimensions. The input circuit as depicted in Fig. 1 uses a direct injection approach and the cell is 2 mil x 2 mil dimension. The concept of direct injection readout is also applied for the InSb/InAsSb pin detector, since the reverse bias impedance of pin is reasonably high.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
ADA288607

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Base Lines
  • Capacitors
  • Circuits
  • Detectors
  • Engineering
  • Epitaxial Growth
  • Fabrication
  • Impedance
  • Long Wavelengths
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Radiation
  • Real Estate
  • Shift Registers

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology