Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Abstract

During this reporting period, we have performed the epitaxial growth of fluoride buffer on Si substrate. A single crystal BaF2 epilayer with IR transparency in the 2- 12 micrometers ranges and smooth surface is found suitable as a lattice matching buffer layer. We have also proceeded to optimize the growth of InAsSb films. Results obtained so far are presented and briefly discussed in this report.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1994
Accession Number
ADA288723

Tags

DTIC Thesaurus Topics

  • Carrier Mobility
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Fabrication
  • Fluorides
  • Long Wavelengths
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Single Crystals
  • Substrates
  • Transition Temperature
  • Transparencies
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology