High-Density Plasma Source for Large-Area Chemical Vapor Deposition of Diamond Films.

Abstract

During this program Science Research Laboratory (SRL) and the Plasma Processing Group in the Department of Chemical Engineering at MIT are developing a large-area, directed plasma/atomic beam source for diamond deposition. The plasma source is based on an inductively-driven plasma accelerator that efficiently produces a high density (1014-1017 cm-3) plasma over an area of 0.1-1 m2. The goal of this effort is to experimentally demonstrate the technical feasibility of employing the plasma source for high-throughput diamond deposition, through characterization of plasma parameters and preliminary diamond deposition experiments. A reactor design study will also be completed during Phase 1, leading to an engineering design of a large-area plasma reactor for Phase H implementation. The period of performance is from 30 September 1994 to 31 March 1995.

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Document Details

Document Type
Technical Report
Publication Date
Dec 15, 1994
Accession Number
ADA289053

Entities

People

  • Xing Chen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Beams
  • Chemical Engineering
  • Chemical Vapor Deposition
  • Construction
  • Diamond Films
  • Engineering
  • Fabrication
  • Films
  • High Density
  • Langmuir Probes
  • Materials
  • Military Research
  • Plasma Accelerators
  • Plasma Diagnostics
  • Substrates
  • Thermal Conductivity
  • Vapor Deposition

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.
  • Technical Research and Report Writing.