Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001).

Abstract

Scanning tunneling microscopy and tunneling spectroscopy have been used to investigate the local structural and electronic properties of boron-induced reconstructions on Si(001). Thermal decomposition of diborane produces three ordered reconstructions, which arise from ordered arrangements of three structural subunits, with a local boron coverage of 1/2 monolayer. A structural model is proposed which accounts for the observed STM features. The principal structural subunit is shown to be an ordered arrangement of four boron atoms at substitutional sites in the first bulk-like silicon layer, which is then capped with ordered arrangements of silicon dimers and dimer vacancies.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 20, 1994
Accession Number
ADA289187

Entities

People

  • Efthimios Kaxiras
  • Robert J. Hamers
  • Yajun Wang

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Structure
  • Atoms
  • Auger Electrons
  • Chemistry
  • Electron Diffraction
  • Electron Transfer
  • Electronic States
  • Electrons
  • Fermi Levels
  • High Resolution
  • High Temperature
  • Low Temperature
  • Measurement
  • Military Research
  • Monomolecular Films
  • Spectra
  • Spectroscopy

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene