Boron-Induced Reconstructions of Si(001) Investigated by Scanning Tunneling Microscopy.

Abstract

The local geometric and electronic structures of boron-induced reconstructions produced by thermal decomposition of diborane and decaborane on Si(001) has been investigated using scanning tunneling microscopy. STM images show that boron induces several related reconstructions, arising from ordered arrangements of simple structural subunits. These boron-induced atomic rearrangements order even at very low boron exposures, leading to a striking spatial segregation of boron on the surface. Similar reconstructions are observed using diborane and decaborane as boron precursors. Annealing at 1000 Kelvin for 90 seconds substantially improves the surface ordering, without significant diffusion of boron from the surface to the bulk.

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Document Details

Document Type
Technical Report
Publication Date
Dec 20, 1994
Accession Number
ADA289222

Entities

People

  • Robert J. Hamers
  • Yajun Wang

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Classification
  • Governments
  • Microscopy
  • Military Research
  • Monitoring
  • Quantum Tunneling
  • Scanning
  • Security
  • Surface Chemistry
  • Tunneling
  • Universities
  • Wisconsin

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene