Boron-induced Morphology Changes in Silicon CVD Growth: A Scanning Tunneling Microscopy Study.

Abstract

Scanning tunneling microscopy has been used to investigate the influence of surface boron on silicon growth via chemical vapor deposition (CVD). The presence of boron-induced reconstructions on the Si(001) surface dramatically changes the surface morphology during subsequent CVD growth of silicon using disilane at 815 Kelvin. Boron-induced reconstructions inhibit the lateral diffusion of silicon atoms from terraces to step edges, leading to greatly enhanced island nucleation, and also reduce the local surface reactivity toward disilane. Strong segregation of boron to the growth surface allows the enhanced island nucleation to persist to subsequent terraces during multilayer CVD growth of silicon, producing a rough but epitaxial surface.

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Document Details

Document Type
Technical Report
Publication Date
Dec 20, 1994
Accession Number
ADA289275

Entities

People

  • Robert J. Hamers
  • Yajun Wang

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Diffusion
  • High Resolution
  • Microscopy
  • Military Research
  • Monomolecular Films
  • Quantum Tunneling
  • Scanning
  • Spatial Distribution
  • Surface Chemistry
  • Surface Roughness
  • Tunneling
  • Universities

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.