Microwave Characterization of Sub-Micron N- and P- Channel MOSFETs Fabricated with Thin Film Silicon-On-Sapphire.

Abstract

This paper reports on microwave characteristics for n- and p- MOS transistors fabricated with thin-film Silicon-on-Sapphire technology . The gates were defined with I-line optical lithography, and ranged down to 0.5 micrometer (drawn dimension). The f sub t values of the transistors reach 22 GHz for the n-channel structures and 21 GEz for the p- channel devices. The PMOS results are significantly higher than found with other Si or III-V technologies, and can potentially lead to high performance complementary microwave circuits. Small signal transistor models are similar to the ones for GaAs FETs. Dependence of model parameters on gate length were determined.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1994
Accession Number
ADA289296

Entities

People

  • C. E. Chang
  • G. A. Garcia
  • G. Imthurn
  • P. R. De La Houssaye
  • P.M. Asbeck

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitance
  • Circuits
  • Electron Beam Lithography
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Films
  • Lithography
  • Microwave Amplifiers
  • Microwaves
  • Monolithic Microwave Integrated Circuits
  • Ocean Surveillance
  • Photolithography
  • Radiation
  • Sapphire
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology