Design and Development of Low Noise, High Speed, High Electron Mobility Transistors (HEMTs).

Abstract

An investigation was undertaken to design and fabricate low noise, high speed InP-based HEMTs. The investigation consisted of several components: the development of quantum corrected hydrodynamics simulation codes; application of these codes to aid in design and optimization of HEMTs for low noise, high speed operation; and fabrication and testing of the resulting designs. Through the research effort, HEMTs of previously unobtained performance levels were designed and fabricated. These results showed that the use of simulation can play a significant and important role in extracting performance from proposed device Structures, and should be used as an integral part of the design process. (jg)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1994
Accession Number
ADA289953

Entities

People

  • H. L. Grubin
  • J. P. Kreskovsky

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Density
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Low Noise
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Solid State Electronics
  • Transistors
  • Two Dimensional

Readers

  • Computational Fluid Dynamics (CFD)
  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing