SOSDOR: Solid-State Device Simulator Code.

Abstract

A 3-D solid state device simulator code, developed at DREO, is presented. The code uses a seven-point finite difference scheme to discretize Poisson's and the continuity equations. The equations are then solved using the Newton-Raphson iteration method. Additional information pertaining to griding, carrier mobility and recombination models as well as boundary condition types incorporated into the code is also presented. The source files of the code and the graphical interfaces are also described. The code was tested by simulating a PIN diode under no bias and under a 20V reverse bias condition. The simulation results are in excellent agreement with the results of simulation of the same device by the industry standard PADRE code. (AN)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1994
Accession Number
ADA289954

Entities

People

  • L. Varga

Organizations

  • Defence Research and Development Canada

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Boltzmann Equation
  • Boundaries
  • Computers
  • Electrons
  • Energy Bands
  • Equations
  • Ionizing Radiation
  • Mobility
  • Pin Diodes
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Simulators
  • Standards
  • Three Dimensional
  • Two Dimensional

Readers

  • Computational Fluid Dynamics (CFD)
  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Semiconductor Device Technology