Gordon Research Conference on Point Defects, Line Defects, and Interfaces in Semiconductors, Held in Plymouth, New Hampshire on July 31 - August 5, 1994.
Abstract
The technical program has continued to evolve and to deal with the hottest new issues , the field of defects. There were two sessions on defects in wide bandgap semiconductors like the group III nitrides and II-VI materials that are receiving much recent attention because of renewed interest in visible optical devices. The presentation of very fundamental research was mixed with device-related defect problems which led to well balanced sessions which should help the community to focus on important issues. Heteroepitaxy and related defect issues continue to play an important role. Talks on strain relief in SiGe epitaxial layers and on the interactions of defects with surfaces and interfaces were especially exciting and well received. Studies of point defects continue to generate exciting results. The talks by Johnson and Estreicher on hydrogen in semiconductors raised several controversial issues which were vigorously discussed. (jg)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 05, 1994
- Accession Number
- ADA290103
Entities
People
- Michael Stavola
Organizations
- Gordon Research Conferences