Development of Ultra-Low Dark Current, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Arrays Staring Imaging Sensor Systems.
Abstract
This final report presents the research findings and accomplishments made on the research project sponsored by ARPA/ONR under grant No. N00014-91-J-1976 for the period of 08/01/91 to 02/01/95. Specific achievements include: (1) development of the first bound-to-miniband (BTM) transition GaAs/GaA1As QWIP for 8-12 micrometers detection; large area (128/128, 256x256, and 512x512) FPAs based on the BTM QWIP structure have been demonstrated by Martin Marietta with excellent imagery, (2) development of a normal incidence type-II AlAs/AlGaAs QWIP grown on (110) GaAs substrate for multi-color detection in the 3-5 and 8-14 micrometers spectral windows, (3) design of 2-D metal grating couplers for efficient coupling of normal incidence IR radiation in n-type QWIPs, and (4) development of two new normal incidence p-type strained-layer III-V QWIPs for 3-5 and 8-12 micrometers detection. An ultra-low dark current p-type tensile strained-layer (PTSL) In(0.3)Ga(0.7)As/In(0.52)Al(0.52)A1(0.48) As QWIP grown on InP by MBE for 8-12 micrometers detection has been developed with BLIP condition for T<100 K. The BLIP detectivity for this PTSL-QWIP was found to be 5.9x10(exp 10) Jones at 8.1 micrometers, Vb = 2V, and T = 77K. A new p-type compressive strained-layer (PCSL) In(0.4)Ga(0.6)As/GaAs QWIP grown on GaAs substrate for 3-5 and 8-14 micrometers was demonstrated for the first time. Detectivity for this PCSL-QWIP was found to be 4.0x10(exp 9) Jones at 8.9 um, Vb=0.3 V and T = 75 K. (jg)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1995
- Accession Number
- ADA290343
Entities
People
- Shengsan Li
Organizations
- University of Florida