Ion Doped Quantum Well Lasers.
Abstract
The objective of this research project is to fabricate erbium-doped light emitting diode lasers. Such lasers are expected to be temperature independent, frequency stable sources of 1538 nm light especially well suited for optical communications. During the first year of the project new volatile erbium-silylamide sources were synthesized for metalorganic chemical vapor deposition of doped III-V compound films, required for laser fabrication. Doping levels to 30 atomic percent were tested but the maximum substitutional dopant level was 0.02 percent. Carbon and nitrogen contaminant levels were minimized, while the amount of silicon left in the film was a function of deposition temperature. Narrow photo- and cathode-luminescence spectra were obtained from these films. Diffusion rates for erbium in gallium arsenide was higher than expected. Device studies are planned for the second year of the project. (jg)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 06, 1995
- Accession Number
- ADA290937
Entities
People
- Anton C. Greenwald