LNTlSb as a Long-Wave Infrared (LWIR) Material: Defects and Transport Properties.

Abstract

We have evaluated three III-V semiconductor alloys as possible candidates for future long-wave infrared (LWIR) detector materials. The cohesive energies, elastic constants, band structures, electron mobilities, and phase diagrams are calculated and are compared to those of Hg sub 1-xCd sub xTe (MCT) alloys. All three of these III-V alloys have their band gap change from negative to positive values as the alloy composition x decreases from 1 to 0. The x values for the 0.1-eV gap are estimated to be 0.67,0.15, and 0.08, respectively, for ITP, ITA, and ITS. While ITP and ITA form stable zincblende solid solutions for all alloy compositions, zincblende ITS is stable only for a range of x less than 0.15. ITP and ITA have considerably larger cohesive energies and elastic constants than does MCT, indicating that they are structurally robust. At a 0.1 -eV gap, the band structures near the gap and the electron mobilities in ITP, ITA, and ITS are also found to be comparable to those of MCT. Because the lattice constants of ITP and ITA are less than 2% larger than the respective values in InP and InAs, the latter should provide natural substrates for the growth of active LWIR alloys. (MM)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1995
Accession Number
ADA291218

Entities

People

  • A. Sher
  • M. A. Berding
  • M. Van Schilfgaarde
  • Siddhartha Krishnamurthy

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Boltzmann Equation
  • Computational Science
  • Crystal Lattice Vibrations
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Infrared Detectors
  • Long-Wavelength Infrared Radiation
  • Materials
  • Molecular Dynamics
  • Semiconductors
  • Solid State Physics
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Educational Psychology
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics