Synthesis of Tungsten Nitrene Complexes as Precursors to Tungsten Nitride.

Abstract

Chemical vapor deposition using organometallic precursors (MOCVD) provides a method for the preparation of thin films. Low valent tungsten nitrene complexes were synthesized as potential precursors to tungsten nitride (WNx), a material used in diffusion barriers for Si or GaAs semiconductor devices. The original target precursors for MOCVD of WNx were the carbonyl-containing complexes (CO) 5-n (PR3)nW=NR, where R is an alkyl or alkyl group. Later synthetic work involved the tungsten(IV) imido (or nitrene) complexes (CO) 2I2LW equivalent NPh, which were prepared by oxidation of the zwitterionic species (CO) 5WNPhNPhC(OMe)Ph with one equivalent of I2 followed by addition of a coordinating species L (L= THF, pyridine, PMe3, P(OMe)3).

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Document Details

Document Type
Technical Report
Publication Date
Jan 17, 1995
Accession Number
ADA291252

Entities

People

  • Lisa Mcelwee-white

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Compounds
  • Chemical Vapor Deposition
  • Chemistry
  • Diffusion
  • Films
  • Materials
  • Metals
  • Oxidation
  • Precursors
  • Pyridines
  • Scientists
  • Semiconductor Devices
  • Semiconductors
  • Students
  • Thin Films
  • Tungsten
  • Vapor Deposition

Fields of Study

  • Chemistry
  • Materials science

Readers

  • Organic Chemistry
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene