Evaluation of Defect-Related Diffusion in Semiconductors by Electrooptical Sampling,

Abstract

The electrooptical sampling technique is used to assess the electrical behavior of ohmic contact regions in GaAs. For purpose, unique ohmic contact coplanar waveguides were fabricated and tested. A reduced electrooptical sampling signal is detected in certain ohmic contact regions. Since the electrical fields present in this device are known a priori, the deviation of the electrooptical signal from its nominal value is attributed to a deviation in the electrooptical coefficient. Defects introduced during the annealing step of the ohmic contact accelerated by existing dislocations are discussed as a mechanism capable of disrupting the electrooptic coefficient. A simple phenomenological diffusion model is presented to explain the mechanism responsible for the nulling of the electrooptical coefficient. jg

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1995
Accession Number
ADA291630

Entities

People

  • Alan R. Mickelson
  • Henry Lee
  • Paul Biernacki

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coefficients
  • Crystal Lattices
  • Diffusion
  • Diffusion Coefficient
  • Dislocations
  • Electric Fields
  • Frequency
  • Heat Of Activation
  • Lasers
  • Metal-Semiconductor Junctions
  • Military Research
  • Optical Properties
  • Optics
  • Sampling
  • Semiconductors
  • Transmission Lines
  • Waveguides

Fields of Study

  • Engineering

Readers

  • Approximation Theory.
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics