Laser Simulation of Single-Event Effects: A State of the Art Review
Abstract
A pulsed laser system for simulating heavy-ion, single-event effects in semiconductor devices is described. The fundamentals of ion and laser interactions in silicon are compared. The results of several case studies demonstrate the utility of the laser technique for both hardness assurance and diagnostic purposes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1995
- Accession Number
- ADA292308
Entities
People
- S. Büchner
Organizations
- Martin Marietta