The Japan Society of Applied Physics Spring Meeting (41st) Held at Meiji University in Kawasaki, Japan on March 28-31, 1994.
Abstract
The 41st Japan Society of Applied Physics Spring Meeting attracted a thousands of Japanese scientists and a few non-Japanese scientists coming mostly from Japanese universities, Japanese industrial research laboratories, and Japanese federally funded research centers. During a four day meeting, there were more than fifty simultaneous sessions in progress, covering most of the applied physics disciplines such as radiation and plasmas, measurements, optics, quantum electronics, optoelectronics, thin film physics, beam physics, applied materials, superconductivity, bioelectronics, semiconductors, crystal formations, and non-metallic formations presented here is an overview of papers presented in three topical sessions which covered the future and prospects of new light emitting materials, nanostructure control and single-electron electronics, and recent progress in silicon carbide and nitride related wide bandgap material research. Mr. S. Nakamura, Nichia Chemical industries, Inc., presented the latest data on InGaN/AlGaN double heterostructure light emitting diodes, which showed a luminescence value of 1.2 candelas, corresponding to an increase in brightness by a factor of 100 as compared to the existing SiC diodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1994
- Accession Number
- ADA292333
Entities
People
- S. J. Yakura