New Thin-Film Nonlinear Optical Materials: Ordered Al(1-x)In (x)P on GaAs.

Abstract

This program successfully demonstrated growth of ordered Al(1-x)In(x)P, lattice-matched to GaAs, by metalorganic chemical vapor deposition (MOCVD). Films were characterized by transmission electron diffraction, double-crystal X-ray rocking curve analysis, and low-temperature photoluminescence. Weak birefringence was seen by spectroscopic ellipsometry. Strong ordering in Al(1-x)In(x)P is best achieved at a growth temperature of approx. 675 deg C. jg

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1994
Accession Number
ADA292485

Entities

People

  • Vernon

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Films
  • Laser Diodes
  • Low Temperature
  • Materials
  • Measurement
  • Optical Materials
  • Optical Properties
  • Reflectance
  • Refractive Index
  • Thin Films
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene