ErAs/GaAs Superlattice Infrared Detector by Chemical Vapor Deposition.
Abstract
The objective of Phase I research was to demonstrate epitaxial growth of GaAs on ErAs on a GaAs substrate using metalorganic chemical vapor deposition. Three volatile erbium sources including cyclopentadienyl, methyl-cyclopentadienyl and tris-trimethyldisilylamide and two sources of arsenic, tertiarybutyl arsine and arsine were tested for ErAs epitaxial growth 011 <100> GaAs. The optimum source chemical combination was arsine and erbium amide; all other combinations resulted in excess carbon incorporation into the erbium arsenide film. Films with excellent crystal structure were realized. Observed erbium diffusion rates at preferred gallium arsenide growth temperatures of 650 deg C exceeded diffusion rates for common dopants such as silicon. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1993
- Accession Number
- ADA292490
Entities
People
- Greenweld