Strained-Bond Semiconductors.
Abstract
Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (a) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (b) elucidation of the physics of doping in Type-II semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (c) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (d) theory of Mobius transforms as applied to physics and remote sensing, (e) new understanding of how defects affect the vibrational properties of semiconductors, (f) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (g) elucidation of the criteria affecting quantum-well luminescence from Si (h) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (i) physics of rare-earth-doped silicon, (j) models of Co adsorption to silicon surfaces, (k) theories of how defects affect the properties of large band-gap superlattices, and (1) models of the effects of electronic structure on the properties of semiconductors. jg p.1
Document Details
- Document Type
- Technical Report
- Publication Date
- May 18, 1994
- Accession Number
- ADA292524
Entities
People
- John D. Dow
Organizations
- Arizona State University