Epitaxial Growth and Characterization of Si(l-x)Ge(x) Materials and Devices.

Abstract

The current program of research was aimed at understanding the issues related to growth and doping of SiGe/Si heterostructures by gas-source MBE, studying the transport properties of the alloys, determining the fundamental material parameters and designing and demonstrating electronic and optoelectronic devices. The specific electronic device is the HBT with high Ge-containing base layers, and the optoelectronic devices are detectors, photoreceivers, and electro-optic modulators. The overall objective is to demonstrate, reliably and reproducibly, the feasibility of integrating SeGe-based optoelectronics with Si-based VLSI technology. We summarize below some of the highlights of the program related to work done in the last year. jg p.3

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1994
Accession Number
ADA292528

Entities

People

  • J. Singh
  • P. Bhattacharya

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Vapor Deposition
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Optical Properties
  • Optoelectronic Devices
  • Power Electronics
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Stratified Fluids

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics