HTMIAC/CINDAS Silicon Properties Database. User's Guide.
Abstract
The Silicon Properties Database presents numerical data and technical information on the properties of pure and doped silicon. Materials comprise a variety of doped silicon materials, having both n-type and p-type conduction, as well as intrinsic silicon. Property coverage includes optical (absorption coefficient, refractive index, and band gap), thermoradiative (normal spectral reflectance, angular spectral reflectance, normal spectral emittance, and normal spectral transmittance), electrical (electrical conductivity and dielectric constant), thermophysical (thermal conductivity, specific heat, thermal expansion, and lattice parameters), damage threshold (rain erosion and laser irradiation), and mechanical (elastic constants, stress-strain, yield strength under tensile, compressive, and shear loading, flexural strength, fracture toughness, and hardness). Property data for silicon that are available in the literature are widely recognized to be sensitive to variations in material related factors. Many issues that are important in determining property behavior of these materials have been sought out in our database activity. Our objective is to bring them together into a single volume (database), and to document the data and supporting information that bear upon the behavior of silicon, in particular the temperature, wavelength, and composition (purity, dopants, carrier concentration) dependence of its properties. (KAR) p. 5
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 21, 1995
- Accession Number
- ADA292602
Entities
People
- C. Y. Ho