Radiation Effects in MOS Devices.

Abstract

We have utilized electron spin resonance (ESR), including a new and much more sensitive ESR technique called spin dependent recombination (SDR), to study radiation damage in metal/oxide/silicon (MOS) field effect transistors (MOSFETS). Our study has led to a considerably greater understanding of the electronic properties of radiation induced interface state defect structure and the relationship of the atomic scale geometry of these defects to their electronic properties. We have also studied the role of atomic scale stress in the creation of E' centers in SiO2. The E' center is the dominant deep hole trap in MOS oxides. In addition, we have used ESR to study the role of hydrogen in the MOS radiation damage process. jg

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADA292645

Entities

People

  • Patrick M. Lenahan

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Spin Resonance
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Ionizing Radiation
  • Magnetic Fields
  • Magnetic Resonance
  • Materials Processing
  • Materials Science
  • Measurement
  • Nuclear Magnetic Resonance
  • P-N Junction Diodes
  • Radiation Effects
  • Resonance
  • Resonant Frequency
  • Semiconductors
  • Spin Resonance

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene