Visible Light Emitting Materials and Injection Devices.

Abstract

We performed real-time, in-situ CL intensity measurements this quarter during the MBE growth of Cd(x)Zn(1-x)Se/ZnSe MQW structures in which we varied the barrier and/or well widths for a fixed Cd(x)Zn(1-x)Se composition (x=0.2). In each case we quantified the integrated intensity of the CL emission observed during the growth. For the MQW structures grown thus far, the most intense integrated CL emission was detected from a structure comprised of 2OOA thick ZnSe barriers and 5OA thick Cd(0.2)Zn(0.8)Se quantum wells. The 200A ZnSe/50 A CdZnSe MQW structure also exhibited strong room temperature exciton emission when ex-situ photoluminescence (PL) was performed on the sample. The PL intensity was measured by Dr. Simmons' group. Consequently, it appears that real-time, in-situ CL monitoring could have interesting applications with regard to the design and production of MQW structures and we plan to continue working in this area. jg

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1995
Accession Number
ADA292701

Entities

People

  • Paul H. Holloway

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Microscopy
  • Electronics Industry
  • Electronics Laboratories
  • Heat Energy
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Mass Spectrometry
  • Materials Science
  • Metal-Semiconductor Junctions
  • Microscopy
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

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  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
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