New Material for High Average Power Infrared Generation: QPM-DB GaAs.
Abstract
We have demonstrated diffusion-bonded-stacked GaAs to have good potential for high average power infrared generation. Diffusion bonding is the formation of a crystalline bond between two single-crystal wafers. Quasi phasematching is achieved in a stack of wafers of alternating orientation with the goal of retaining the low loss and high damage threshold of bulk single-crystal material. In this program we have substantially reduced loss per interface from 2% to 0.5% at 2 micrometers. This is adequate for single-pass applications in harmonic, sum and difference frequency generation, but further reduction of loss is required for resonant cavity applications such as optical parametric oscillation. We have performed studies of bonding techniques, surface preparation, optical damage thresholds, and numerical modeling of nonlinear frequency conversion. We are continuing this investigation with new characterization facilities and bonding apparatus and techniques developed in this program. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 03, 1995
- Accession Number
- ADA292714
Entities
People
- Leslie A. Gordon
- Robert C. Eckardt
- Robert L. Byer
- Roger K. Route
- Ropbert S. Feigelson
Organizations
- Stanford University