Pseudomorphic Heterostructure Materials for High Performance Devices.

Abstract

Using the planar-doping technique, Si has been shown to be amphoteric on (311)A InAlAs/InGaAs/InP grown by molecular beam epitaxy and excellent modulation-doped field effect transistors have been demonstrated. Through the use of an AlN/GaN strained superlattice buffer layer, high quality GaN layers were obtained. Crystalline SiC thin layers have been grown on 125 mm silicon-on-insulator (SOI) substrates. These two techniques have also been combined to synthesize the first GaN on SiC on SOI structure. Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. jg

Document Details

• Document Type: Technical Report
• Publication Date: Mar 21, 1995
• Accession Number: ADA292906

Entities

People

• Wen I. Wang

Organizations

• Columbia University

Tags

DTIC Thesaurus Topics

• Absorption Coefficients
• Chemistry
• Detectors
• Electrical Engineering
• Field Effect Transistors
• Heterojunctions
• Infrared Detectors
• Materials
• Modulation
• Molecular Beam Epitaxy
• Molecular Beams
• Optical Modulators
• Quantum Wells
• Semiconductor Devices
• Semiconductors
• Spectra
• Transitions

Fields of Study

• Materials science

Readers

• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Semiconductor Device Technology

Technology Areas

• Microelectronics
• Quantum Computing