Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Abstract
Research continued in the growth of boron nitride films on various substrates including Si(100), diamond (100), Cu( 100) and Ni( 100) via ion beam assisted electron beam evaporation. Fourier transform infrared spectroscopy and high resolution transmission electron microscopy showed that the total films on Si and diamond consisted of the sequence from the substrate: a-BN, h-BN, c-BN. The c-BN layers formed as a function of deposition temperature, ion current and thickness. The occurrence of this layer is attributed to increasing intrinsic biaxial compressive stress generated during deposition. The interface and surface structure of highly oriented diamond films were examined by low resolution transmission electron microscopy (LRTEM), high resolution transmission electron microscopy (HRTEM) and using a transmission electron microscope with in situ cathodoluminescence. Interface studies by HRTEM indicated that SiC formation may have assisted in the formation of highly oriented diamond. Additionally, in some areas diamond appeared to be in direct contact with the silicon substrate; no indication of an amorphous or crystalline interlayer was observed. The grain boundaries of the highly oriented (100) diamond particles observed by LRTEM showed that the misorientation between these particles was compensated by a series of parallel dislocations. Finally, TEM/CL results showed that the majority of luminescence in the plan view was from misoriented or highly defective diamond grains. jg
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1995
- Accession Number
- ADA293106
Entities
People
- F. R. Sivazlian
- J. T. Glass
- K. S. Ailey
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University